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SI6467BDQ-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132248

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 12V 
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 850mV @ 450µA 
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V 
Vgs (Max) ±8V 
FET Feature 
Power Dissipation (Max) 1.05W (Ta) 
Rds On (Max) @ Id, Vgs 12.5 mOhm @ 8A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-TSSOP 
Package / Case 8-TSSOP (0.173", 4.40mm Width) 

Description

MOSFET P-CH 12V 6.8A 8TSSOP - P-Channel 12V 6.8A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP

Transistors SI6467BDQ-T1-GE3

Datasheet SI6467BDQ-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
SI6467BDQ-T1-GE3
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