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SI5481DU-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132648

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 1V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 50nC @ 8V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 10V 
FET Feature 
Power Dissipation (Max) 3.1W (Ta), 17.8W (Tc) 
Rds On (Max) @ Id, Vgs 22 mOhm @ 6.5A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PowerPAK® ChipFet Single 
Package / Case PowerPAK® ChipFET™ Single 

Description

MOSFET P-CH 20V 12A PPAK CHIPFET - P-Channel 20V 12A (Tc) 3.1W (Ta), 17.8W (Tc) Surface Mount PowerPAK® ChipFet Single

Transistors SI5481DU-T1-GE3

Datasheet SI5481DU-T1-GE3 (PDF)

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