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SI5475BDC-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132643

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 12V 
Current - Continuous Drain (Id) @ 25°C 6A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 1V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 40nC @ 8V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 6V 
FET Feature 
Power Dissipation (Max) 2.5W (Ta), 6.3W (Tc) 
Rds On (Max) @ Id, Vgs 28 mOhm @ 5.6A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 1206-8 ChipFET™ 
Package / Case 8-SMD, Flat Lead 

Description

MOSFET P-CH 12V 6A 1206-8 - P-Channel 12V 6A (Ta) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

Transistors SI5475BDC-T1-GE3

Datasheet SI5475BDC-T1-GE3 (PDF)

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Available: 7 psc.
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SI5475BDC-T1-GE3
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