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SI5461EDC-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132639

Technical Information

Manufacturer Vishay Siliconix 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 450mV @ 250µA (Min) 
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V 
Vgs (Max) ±12V 
FET Feature 
Power Dissipation (Max) 1.3W (Ta) 
Rds On (Max) @ Id, Vgs 45 mOhm @ 5A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 1206-8 ChipFET™ 
Package / Case 8-SMD, Flat Lead 

Description

MOSFET P-CH 20V 4.5A CHIPFET - P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Transistors SI5461EDC-T1-GE3

Datasheet SI5461EDC-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
SI5461EDC-T1-GE3
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