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SI5402BDC-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132234

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 3V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V 
Vgs (Max) ±20V 
FET Feature 
Power Dissipation (Max) 1.3W (Ta) 
Rds On (Max) @ Id, Vgs 35 mOhm @ 4.9A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 1206-8 ChipFET™ 
Package / Case 8-SMD, Flat Lead 

Description

MOSFET N-CH 30V 4.9A 1206-8 - N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Transistors SI5402BDC-T1-GE3

Datasheet SI5402BDC-T1-GE3 (PDF)

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SI5402BDC-T1-GE3
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