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SI4836DY-T1-E3

Manufacturer: Vishay Siliconix
REK ID: 134183

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 12V 
Current - Continuous Drain (Id) @ 25°C 17A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 400mV @ 250µA (Min) 
Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V 
Vgs (Max) ±8V 
FET Feature 
Power Dissipation (Max) 1.6W (Ta) 
Rds On (Max) @ Id, Vgs 3 mOhm @ 25A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 12V 17A 8-SOIC - N-Channel 12V 17A (Ta) 1.6W (Ta) Surface Mount 8-SO

Transistors SI4836DY-T1-E3

Datasheet SI4836DY-T1-E3 (PDF)

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SI4836DY-T1-E3
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