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SI4752DY-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 134910

Technical Information

Manufacturer Vishay Siliconix 
Series SkyFET®, TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.2V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 15V 
FET Feature Schottky Diode (Body) 
Power Dissipation (Max) 3W (Ta), 6.25W (Tc) 
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 10A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 30V 25A 8-SO - N-Channel 30V 25A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO

Transistors SI4752DY-T1-GE3

Datasheet SI4752DY-T1-GE3 (PDF)

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SI4752DY-T1-GE3
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