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SI4466DY-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132597

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 1.4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V 
Vgs (Max) ±12V 
FET Feature 
Power Dissipation (Max) 1.5W (Ta) 
Rds On (Max) @ Id, Vgs 9 mOhm @ 13.5A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 20V 9.5A 8-SOIC - N-Channel 20V 9.5A (Ta) 1.5W (Ta) Surface Mount 8-SO

Transistors SI4466DY-T1-GE3

Datasheet SI4466DY-T1-GE3 (PDF)

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SI4466DY-T1-GE3
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