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SI4448DY-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132593

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 12V 
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 1V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 150nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 12350pF @ 6V 
FET Feature 
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc) 
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 20A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 12V 50A 8-SOIC - N-Channel 12V 50A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO

Transistors SI4448DY-T1-GE3

Datasheet SI4448DY-T1-GE3 (PDF)

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SI4448DY-T1-GE3
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