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SI4446DY-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132222

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 1.6V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V 
Vgs (Max) ±12V 
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 20V 
FET Feature 
Power Dissipation (Max) 1.1W (Ta) 
Rds On (Max) @ Id, Vgs 40 mOhm @ 5.2A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 40V 3.9A 8-SOIC - N-Channel 40V 3.9A (Ta) 1.1W (Ta) Surface Mount 8-SO

Transistors SI4446DY-T1-GE3

Datasheet SI4446DY-T1-GE3 (PDF)

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SI4446DY-T1-GE3
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