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SI4409DY-T1-E3

Manufacturer: Vishay Siliconix
REK ID: 132587

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 150V 
Current - Continuous Drain (Id) @ 25°C 1.3A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 332pF @ 50V 
FET Feature 
Power Dissipation (Max) 2.2W (Ta), 4.6W (Tc) 
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 500mA, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET P-CH 150V 1.3A 8-SOIC - P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SO

Transistors SI4409DY-T1-E3

Datasheet SI4409DY-T1-E3 (PDF)

Price (check the terms and price with the managers)
Available: 11 psc.
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SI4409DY-T1-E3
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