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SI4401DY-T1-E3

Manufacturer: Vishay Siliconix
REK ID: 134174

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 1V @ 250µA (Min) 
Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V 
Vgs (Max) ±20V 
FET Feature 
Power Dissipation (Max) 1.5W (Ta) 
Rds On (Max) @ Id, Vgs 15.5 mOhm @ 10.5A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET P-CH 40V 8.7A 8-SOIC - P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO

Transistors SI4401DY-T1-E3

Datasheet SI4401DY-T1-E3 (PDF)

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SI4401DY-T1-E3
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