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SI4104DY-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132209

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 446pF @ 50V 
FET Feature 
Power Dissipation (Max) 2.5W (Ta), 5W (Tc) 
Rds On (Max) @ Id, Vgs 105 mOhm @ 5A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 100V 4.6A 8-SOIC - N-Channel 100V 4.6A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

Transistors SI4104DY-T1-GE3

Datasheet SI4104DY-T1-GE3 (PDF)

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Available: 16 psc.
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SI4104DY-T1-GE3
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