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SI3475DV-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132204

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 200V 
Current - Continuous Drain (Id) @ 25°C 950mA (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 50V 
FET Feature 
Power Dissipation (Max) 2W (Ta), 3.2W (Tc) 
Rds On (Max) @ Id, Vgs 1.61 Ohm @ 900mA, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-TSOP 
Package / Case SOT-23-6 Thin, TSOT-23-6 

Description

MOSFET P-CH 200V 0.95A 6-TSOP - P-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP

Transistors SI3475DV-T1-GE3

Datasheet SI3475DV-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 15 psc.
Price available upon request
SI3475DV-T1-GE3
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