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SI3451DV-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132550

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 1.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 5V 
Vgs (Max) ±12V 
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V 
FET Feature 
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc) 
Rds On (Max) @ Id, Vgs 115 mOhm @ 2.6A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-TSOP 
Package / Case SOT-23-6 Thin, TSOT-23-6 

Description

MOSFET P-CH 20V 2.8A 6-TSOP - P-Channel 20V 2.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount 6-TSOP

Transistors SI3451DV-T1-GE3

Datasheet SI3451DV-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
Price available upon request
SI3451DV-T1-GE3
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