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SI2335DS-T1-E3

Manufacturer: Vishay Siliconix
REK ID: 134200

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 12V 
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 450mV @ 250µA (Min) 
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 6V 
FET Feature 
Power Dissipation (Max) 750mW (Ta) 
Rds On (Max) @ Id, Vgs 51 mOhm @ 4A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-23-3 (TO-236) 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET P-CH 12V 3.2A SOT23 - P-Channel 12V 3.2A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Transistors SI2335DS-T1-E3

Datasheet SI2335DS-T1-E3 (PDF)

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SI2335DS-T1-E3
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