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SI2311DS-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132531

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 8V 
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 800mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 4V 
FET Feature 
Power Dissipation (Max) 710mW (Ta) 
Rds On (Max) @ Id, Vgs 45 mOhm @ 3.5A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-23-3 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET P-CH 8V 3A SOT23 - P-Channel 8V 3A (Ta) 710mW (Ta) Surface Mount SOT-23-3

Transistors SI2311DS-T1-GE3

Datasheet SI2311DS-T1-GE3 (PDF)

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SI2311DS-T1-GE3
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