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SI2303BDS-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132529

Technical Information

Manufacturer Vishay Siliconix 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 1.49A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 3V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 15V 
FET Feature 
Power Dissipation (Max) 700mW (Ta) 
Rds On (Max) @ Id, Vgs 200 mOhm @ 1.7A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-23-3 (TO-236) 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET P-CH 30V 1.49A SOT23-3 - P-Channel 30V 1.49A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Transistors SI2303BDS-T1-GE3

Datasheet SI2303BDS-T1-GE3 (PDF)

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Available: 17 psc.
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SI2303BDS-T1-GE3
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