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SI1417EDH-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132192

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 12V 
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 450mV @ 250µA (Min) 
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V 
Vgs (Max) ±12V 
FET Feature 
Power Dissipation (Max) 1W (Ta) 
Rds On (Max) @ Id, Vgs 85 mOhm @ 3.3A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SC-70-6 (SOT-363) 
Package / Case 6-TSSOP, SC-88, SOT-363 

Description

MOSFET P-CH 12V 2.7A SC-70-6 - P-Channel 12V 2.7A (Ta) 1W (Ta) Surface Mount SC-70-6 (SOT-363)

Transistors SI1417EDH-T1-GE3

Datasheet SI1417EDH-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
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SI1417EDH-T1-GE3
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