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SI1406DH-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132187

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 1.2V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V 
Vgs (Max) ±8V 
FET Feature 
Power Dissipation (Max) 1W (Ta) 
Rds On (Max) @ Id, Vgs 65 mOhm @ 3.9A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SC-70-6 (SOT-363) 
Package / Case 6-TSSOP, SC-88, SOT-363 

Description

MOSFET N-CH 20V 3.1A SC-70-6 - N-Channel 20V 3.1A (Ta) 1W (Ta) Surface Mount SC-70-6 (SOT-363)

Transistors SI1406DH-T1-GE3

Datasheet SI1406DH-T1-GE3 (PDF)

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SI1406DH-T1-GE3
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