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SI1300BDL-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132171

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 400mA (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 1V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 0.84nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 35pF @ 10V 
FET Feature 
Power Dissipation (Max) 190mW (Ta), 200mW (Tc) 
Rds On (Max) @ Id, Vgs 850 mOhm @ 250mA, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SC-70-3 
Package / Case SC-70, SOT-323 

Description

MOSFET N-CH 20V 400MA SC-70-3 - N-Channel 20V 400mA (Tc) 190mW (Ta), 200mW (Tc) Surface Mount SC-70-3

Transistors SI1300BDL-T1-GE3

Datasheet SI1300BDL-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
Price available upon request
SI1300BDL-T1-GE3
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