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SI1069X-T1-E3

Manufacturer: Vishay Siliconix
REK ID: 132514

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 1.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 6.86nC @ 5V 
Vgs (Max) ±12V 
Input Capacitance (Ciss) (Max) @ Vds 308pF @ 10V 
FET Feature 
Power Dissipation (Max) 236mW (Ta) 
Rds On (Max) @ Id, Vgs 184 mOhm @ 940mA, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SC-89-6 
Package / Case SOT-563, SOT-666 

Description

MOSFET P-CH 20V 0.94A SC89-6 - P-Channel 20V 236mW (Ta) Surface Mount SC-89-6

Transistors SI1069X-T1-E3

Datasheet SI1069X-T1-E3 (PDF)

Price (check the terms and price with the managers)
Available: 14 psc.
Price available upon request
SI1069X-T1-E3
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