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SI1056X-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132168

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 950mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V 
FET Feature 
Power Dissipation (Max) 236mW (Ta) 
Rds On (Max) @ Id, Vgs 89 mOhm @ 1.32A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SC-89-6 
Package / Case SOT-563, SOT-666 

Description

MOSFET N-CH 20V SC-89-6 - N-Channel 20V 236mW (Ta) Surface Mount SC-89-6

Transistors SI1056X-T1-GE3

Datasheet SI1056X-T1-GE3 (PDF)

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SI1056X-T1-GE3
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