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SI1039X-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132074

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 12V 
Current - Continuous Drain (Id) @ 25°C 870mA (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 450mV @ 250µA (Min) 
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V 
Vgs (Max) ±8V 
FET Feature 
Power Dissipation (Max) 170mW (Ta) 
Rds On (Max) @ Id, Vgs 165 mOhm @ 870mA, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SC-89-6 
Package / Case SOT-563, SOT-666 

Description

MOSFET P-CH 12V 0.87A SC89 - P-Channel 12V 870mA (Ta) 170mW (Ta) Surface Mount SC-89-6

Transistors SI1039X-T1-GE3

Datasheet SI1039X-T1-GE3 (PDF)

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SI1039X-T1-GE3
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