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RQJ0303PGDQA#H6

Manufacturer: Renesas Electronics America
REK ID: 134868

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V 
Vgs (Max) +10V, -20V 
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 10V 
FET Feature 
Power Dissipation (Max) 800mW (Ta) 
Rds On (Max) @ Id, Vgs 68 mOhm @ 1.6A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 3-MPAK 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET P-CH 30V 3.3A 3MPAK - P-Channel 30V 3.3A (Ta) 800mW (Ta) Surface Mount 3-MPAK

Transistors RQJ0303PGDQA#H6

Datasheet RQJ0303PGDQA#H6 (PDF)

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Available: 9 psc.
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RQJ0303PGDQA#H6
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