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RP1E100RPTR

Manufacturer: Rohm Semiconductor
REK ID: 131996

Technical Information

Manufacturer Rohm Semiconductor 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 2.5V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 39nC @ 5V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 10V 
FET Feature 
Power Dissipation (Max) 2W (Ta) 
Rds On (Max) @ Id, Vgs 12.6 mOhm @ 10A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package MPT6 
Package / Case 6-SMD, Flat Leads 

Description

MOSFET P-CH 30V 10A MPT6 - P-Channel 30V 10A (Ta) 2W (Ta) Surface Mount MPT6

Transistors RP1E100RPTR

Datasheet RP1E100RPTR (PDF)

Price (check the terms and price with the managers)
Available: 5 psc.
Price available upon request
RP1E100RPTR
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