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RJK6025DPD-00#J2

Manufacturer: Renesas Electronics America
REK ID: 133230

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 5V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 37.5pF @ 25V 
FET Feature 
Power Dissipation (Max) 29.7W (Tc) 
Rds On (Max) @ Id, Vgs 17.5 Ohm @ 500mA, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package MP-3A 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 600V 1A MP3A - N-Channel 600V 1A (Ta) 29.7W (Tc) Surface Mount MP-3A

Transistors RJK6025DPD-00#J2

Datasheet RJK6025DPD-00#J2 (PDF)

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RJK6025DPD-00#J2
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