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RJK4514DPK-00#T0

Manufacturer: Renesas Electronics America
REK ID: 134386

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tube  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 450V 
Current - Continuous Drain (Id) @ 25°C 22A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V 
FET Feature 
Power Dissipation (Max) 150W (Tc) 
Rds On (Max) @ Id, Vgs 300 mOhm @ 11A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-3P 
Package / Case TO-3P-3, SC-65-3 

Description

MOSFET N-CH 450V 22A TO3P - N-Channel 450V 22A (Ta) 150W (Tc) Through Hole TO-3P

Transistors RJK4514DPK-00#T0

Datasheet RJK4514DPK-00#T0 (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
Price available upon request
RJK4514DPK-00#T0
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