| Manufacturer | Renesas Electronics America |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 20A, 10V |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PFM |
| Package / Case | TO-3PFM, SC-93-3 |
MOSFET N-CH 200V 40A TO3PFM - N-Channel 200V 40A (Ta) 60W (Tc) Through Hole TO-3PFM
Transistors RJK2009DPM-00#T0
The manager will inform you of the total cost including delivery.