| Manufacturer | Renesas Electronics America |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 141nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 55A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
MOSFET N-CH 60V 110A TO220 - N-Channel 60V 110A (Ta) 200W (Tc) Through Hole TO-220AB
Transistors RJK0601DPN-E0#T2
The manager will inform you of the total cost including delivery.