| Manufacturer | Renesas Electronics America |
| Series | - |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 17.5A, 10V |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | WPAK(3F) (5x6) |
| Package / Case | 8-PowerVDFN |
MOSFET N-CH - N-Channel 30V 35A (Ta) 40W (Ta) Surface Mount WPAK(3F) (5x6)
Transistors RJK0353DPA-WS#J0B
The manager will inform you of the total cost including delivery.