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RJH65D27BDPQ-A0#T2

Manufacturer: Renesas Electronics America
REK ID: 82595

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tube  
Part Status Active 
IGBT Type Trench 
Voltage - Collector Emitter Breakdown (Max) 650V 
Current - Collector (Ic) (Max) 100A 
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 50A 
Power - Max 375W 
Switching Energy 1mJ (on), 1.5mJ (off) 
Input Type Standard 
Gate Charge 175nC 
Td (on/off) @ 25°C 20ns/165ns 
Test Condition 400V, 50A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 80ns 
Operating Temperature 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247A 

Description

IGBT TRENCH 650V 100A TO247A - IGBT Trench 650V 100A 375W Through Hole TO-247A

IGBT Transistors RJH65D27BDPQ-A0#T2

Datasheet RJH65D27BDPQ-A0#T2 (PDF)

Price (check the terms and price with the managers)
Available: 17 psc.
Price available upon request
RJH65D27BDPQ-A0#T2
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