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RGT8NS65DGTL

Manufacturer: Rohm Semiconductor
REK ID: 79825
1.44 €

Technical Information

Manufacturer Rohm Semiconductor 
Series 
Packaging Cut Tape (CT)  
Part Status Active 
IGBT Type Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 650V 
Current - Collector (Ic) (Max) 8A 
Current - Collector Pulsed (Icm) 12A 
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A 
Power - Max 65W 
Switching Energy 
Input Type Standard 
Gate Charge 13.5nC 
Td (on/off) @ 25°C 17ns/69ns 
Test Condition 400V, 4A, 50 Ohm, 15V 
Reverse Recovery Time (trr) 40ns 
Operating Temperature -40°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 
Supplier Device Package LPDS (TO-263S) 

Description

IGBT 650V 8A 65W TO-263S - IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S)

IGBT Transistors RGT8NS65DGTL

Datasheet RGT8NS65DGTL (PDF)

Price (check the terms and price with the managers)
Available: 925 psc.
MOQPrice
1.44 € 
10 1.28 € 
25 1.15 € 
100 1.01 € 
250 0.88 € 
500 0.78 € 
RGT8NS65DGTL
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