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RGT8NS65DGTL

Manufacturer: Rohm Semiconductor
REK ID: 79824
0.60 €

Technical Information

Manufacturer Rohm Semiconductor 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
IGBT Type Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 650V 
Current - Collector (Ic) (Max) 8A 
Current - Collector Pulsed (Icm) 12A 
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A 
Power - Max 65W 
Switching Energy 
Input Type Standard 
Gate Charge 13.5nC 
Td (on/off) @ 25°C 17ns/69ns 
Test Condition 400V, 4A, 50 Ohm, 15V 
Reverse Recovery Time (trr) 40ns 
Operating Temperature -40°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 
Supplier Device Package LPDS (TO-263S) 

Description

IGBT 650V 8A 65W TO-263S - IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S)

IGBT Transistors RGT8NS65DGTL

Datasheet RGT8NS65DGTL (PDF)

Price (check the terms and price with the managers)
Available: 6 psc.
MOQPrice
0.60 € 
2,000 0.56 € 
5,000 0.53 € 
RGT8NS65DGTL
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