| Manufacturer | NXP USA Inc. |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 921pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4 mOhm @ 15A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
MOSFET N-CH 25V 56A LL LFPAK - N-Channel 25V 56A (Tc) 42W (Tc) Surface Mount LFPAK56, Power-SO8
Transistors PSMN7R5-25YLC,115
The manager will inform you of the total cost including delivery.