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PSMN5R6-100XS,127

Manufacturer: NXP USA Inc.
REK ID: 136649

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 61.8A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 8061pF @ 50V 
FET Feature 
Power Dissipation (Max) 60W (Tc) 
Rds On (Max) @ Id, Vgs 5.6 mOhm @ 15A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220F 
Package / Case TO-220-3 Full Pack, Isolated Tab 

Description

MOSFET N-CH 100V 61.8A TO220F - N-Channel 100V 61.8A (Tc) 60W (Tc) Through Hole TO-220F

Transistors PSMN5R6-100XS,127

Datasheet PSMN5R6-100XS,127 (PDF)

Price (check the terms and price with the managers)
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PSMN5R6-100XS,127
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