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PSMN1R6-40YLC,115

Manufacturer: Nexperia USA Inc.
REK ID: 134112

Technical Information

Manufacturer Nexperia USA Inc. 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 1.95V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 7790pF @ 20V 
FET Feature 
Power Dissipation (Max) 288W (Tc) 
Rds On (Max) @ Id, Vgs 1.55 mOhm @ 25A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package LFPAK56, Power-SO8 
Package / Case SOT-1023, 4-LFPAK 

Description

MOSFET N-CH 40V 100A LFPAK-SO8 - N-Channel 40V 100A (Tc) 288W (Tc) Surface Mount LFPAK56, Power-SO8

Transistors PSMN1R6-40YLC,115

Datasheet PSMN1R6-40YLC,115 (PDF)

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Available: 13 psc.
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PSMN1R6-40YLC,115
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