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PSMN035-100LS,115

Manufacturer: NXP USA Inc.
REK ID: 132409

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 27A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 50V 
FET Feature 
Power Dissipation (Max) 65W (Tc) 
Rds On (Max) @ Id, Vgs 32 mOhm @ 10A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-DFN3333 (3.3x3.3) 
Package / Case 8-VDFN Exposed Pad 

Description

MOSFET N-CH QFN3333 - N-Channel 100V 27A (Tc) 65W (Tc) Surface Mount 8-DFN3333 (3.3x3.3)

Transistors PSMN035-100LS,115

Datasheet PSMN035-100LS,115 (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
Price available upon request
PSMN035-100LS,115
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