Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 103nC @ 5V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 230W (Tc) |
Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
MOSFET N-CH 55V 75A TO220AB - N-Channel 55V 75A (Tc) 230W (Tc) Through Hole TO-220AB
Transistors PSMN005-55P,127
The manager will inform you of the total cost including delivery.