| Manufacturer | Nexperia USA Inc. |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.94nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 51pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 200mA, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-DFN1006B (0.6x1) |
| Package / Case | 3-XFDFN |
MOSFET N-CH 20V 1A 3DFN - N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount 3-DFN1006B (0.6x1)
Transistors PMZB300XN,315
The manager will inform you of the total cost including delivery.