| Manufacturer | Nexperia USA Inc. |
| Series | - |
| Part Status | Last Time Buy |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 744pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 480mW (Ta), 4.17W (Tc) |
| Rds On (Max) @ Id, Vgs | 74 mOhm @ 2.8A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 20V SOT23 - P-Channel 20V 2.8A (Ta) 480mW (Ta), 4.17W (Tc) Surface Mount TO-236AB
Transistors PMV65XP/MIR
The manager will inform you of the total cost including delivery.