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PMV65UN,215

Manufacturer: NXP USA Inc.
REK ID: 134841

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 1V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 183pF @ 10V 
FET Feature 
Power Dissipation (Max) 310mW (Ta), 2.17W (Tc) 
Rds On (Max) @ Id, Vgs 76 mOhm @ 2A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-236AB (SOT23) 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET N-CH 20V 2A SOT-23 - N-Channel 20V 2.2A (Ta) 310mW (Ta), 2.17W (Tc) Surface Mount TO-236AB (SOT23)

Transistors PMV65UN,215

Datasheet PMV65UN,215 (PDF)

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PMV65UN,215
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