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PMV130ENEA/DG/B2R

Manufacturer: Nexperia USA Inc.
REK ID: 136209

Technical Information

Manufacturer Nexperia USA Inc. 
Series Automotive, AEC-Q101 
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 20V 
FET Feature 
Power Dissipation (Max) 5W (Tc) 
Rds On (Max) @ Id, Vgs 120 mOhm @ 1.5A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-236AB 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET N-CH 40V 2.1A TO236AB - N-Channel 40V 2.1A (Ta) 5W (Tc) Surface Mount TO-236AB

Transistors PMV130ENEA/DG/B2R

Datasheet PMV130ENEA/DG/B2R (PDF)

Price (check the terms and price with the managers)
Available: 9 psc.
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