| Manufacturer | NXP USA Inc. |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 80V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 6.2W (Tc) |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 800mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
MOSFET N-CH 100V SC-73 - N-Channel 100V 900mA (Ta) 800mW (Ta), 6.2W (Tc) Surface Mount SOT-223
Transistors PMT760EN,135
The manager will inform you of the total cost including delivery.