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PMT21EN,135

Manufacturer: NXP USA Inc.
REK ID: 134816

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 14.4nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 588pF @ 15V 
FET Feature 
Power Dissipation (Max) 820mW (Ta), 8.33W (Tc) 
Rds On (Max) @ Id, Vgs 21 mOhm @ 7.4A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-223 
Package / Case TO-261-4, TO-261AA 

Description

MOSFET N-CH 30V 7.4A SC-73 - N-Channel 30V 7.4A (Ta) 820mW (Ta), 8.33W (Tc) Surface Mount SOT-223

Transistors PMT21EN,135

Datasheet PMT21EN,135 (PDF)

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Available: 10 psc.
Price available upon request
PMT21EN,135
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