Manufacturer | NXP USA Inc. |
Series | - |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 80V |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta), 8.3W (Tc) |
Rds On (Max) @ Id, Vgs | 235 mOhm @ 1.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
MOSFET N-CH 100V 1.8A SC-73 - N-Channel 100V 1.8A (Ta) 800mW (Ta), 8.3W (Tc) Surface Mount SOT-223
Transistors PMT200EN,115
The manager will inform you of the total cost including delivery.