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PMT200EN,115

Manufacturer: NXP USA Inc.
REK ID: 136696

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 80V 
FET Feature 
Power Dissipation (Max) 800mW (Ta), 8.3W (Tc) 
Rds On (Max) @ Id, Vgs 235 mOhm @ 1.5A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-223 
Package / Case TO-261-4, TO-261AA 

Description

MOSFET N-CH 100V 1.8A SC-73 - N-Channel 100V 1.8A (Ta) 800mW (Ta), 8.3W (Tc) Surface Mount SOT-223

Transistors PMT200EN,115

Price (check the terms and price with the managers)
Available: 5 psc.
Price available upon request
PMT200EN,115
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