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PMR290UNE,115

Manufacturer: NXP USA Inc.
REK ID: 134435

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 700mA (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 950mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V 
FET Feature 
Power Dissipation (Max) 250mW (Ta), 770mW (Tc) 
Rds On (Max) @ Id, Vgs 380 mOhm @ 500mA, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SC-75 
Package / Case SC-75, SOT-416 

Description

MOSFET N-CH 20V 700MA SC-75 - N-Channel 20V 700mA (Ta) 250mW (Ta), 770mW (Tc) Surface Mount SC-75

Transistors PMR290UNE,115

Datasheet PMR290UNE,115 (PDF)

Price (check the terms and price with the managers)
Available: 17 psc.
Price available upon request
PMR290UNE,115
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