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PMPB16XN,115

Manufacturer: NXP USA Inc.
REK ID: 134754

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 1.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 4.5V 
Vgs (Max) ±12V 
Input Capacitance (Ciss) (Max) @ Vds 775pF @ 15V 
FET Feature 
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) 
Rds On (Max) @ Id, Vgs 21 mOhm @ 7.2A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-DFN2020MD (2x2) 
Package / Case 6-UDFN Exposed Pad 

Description

MOSFET N-CH 30V 7.2A 6DFN - N-Channel 30V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount 6-DFN2020MD (2x2)

Transistors PMPB16XN,115

Datasheet PMPB16XN,115 (PDF)

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Available: 8 psc.
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PMPB16XN,115
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