| Manufacturer | NXP USA Inc. |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 886pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 7.9A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DFN2020MD (2x2) |
| Package / Case | 6-UDFN Exposed Pad |
MOSFET N-CH 20V 7.9A 6DFN - N-Channel 20V 7.9A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount 6-DFN2020MD (2x2)
Transistors PMPB12UN,115
The manager will inform you of the total cost including delivery.