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PMN35EN,115

Manufacturer: NXP USA Inc.
REK ID: 136644

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 334pF @ 15V 
FET Feature 
Power Dissipation (Max) 500mW (Ta) 
Rds On (Max) @ Id, Vgs 31 mOhm @ 5.1A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-TSOP 
Package / Case SC-74, SOT-457 

Description

MOSFET N-CH 30V 5.1A 6TSOP - N-Channel 30V 5.1A (Ta) 500mW (Ta) Surface Mount 6-TSOP

Transistors PMN35EN,115

Datasheet PMN35EN,115 (PDF)

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Available: 14 psc.
Price available upon request
PMN35EN,115
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